Multi-Chip Module

ABSTRACT

A multi-chip module is disclosed. In an embodiment, a multi-chip module includes a first carrier including a mold material and at least two light-emitting diode chips embedded at least by side faces in the first carrier, wherein the light-emitting diode chips have first electrical contacts on a front side and second electrical contacts on a rear side, wherein the front side is configured as a radiation side, wherein the first electrical contacts are connected to control lines, wherein the control lines are arranged on a front side of the first carrier, wherein the second electrical contacts are connected to a collective line, and wherein the collective line is led to a rear side of the first carrier.

This patent application is a national phase filing under section 371 ofPCT/EP2017/069383, filed Aug. 1, 2017, which claims the priority ofGerman patent application 102016114275.1, filed Aug. 2, 2016, each ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The invention relates to a multi-chip module.

BACKGROUND

In the prior art it is known to arrange a plurality of light-emittingdiode chips on a circuit board in order to realize an image pixel of avideo wall.

SUMMARY OF THE INVENTION

Embodiments provide a simplified multi-chip module and a simplifiedmethod for producing a multi-chip module.

Embodiments also provide a multi-chip module, wherein light-emittingdiode chips are embedded in a carrier comprising a mold material. Thelight-emitting diode chips comprise a first electrical contact in eachcase on the front side. Moreover, the light-emitting diode chipscomprise a second electrical contact on the rear side. The secondelectrical contacts are connected to a collective line arranged on arear side of the first carrier. The first electrical contacts areconnected to a control line, wherein the control lines are arranged on afront side of the first carrier. A simply constructed multi-chip modulemay be provided in this way.

In one embodiment, electrically conductive plated-through holes areprovided in the first carrier and are led from the front side to therear side of the first carrier, wherein a control line is connected to aplated-through hole. In this way, a multi-chip module is provided inwhich both the first and the second electrical contacts of thelight-emitting diode chips are accessible on the rear side of the firstcarrier. A multi-chip module configured as a surface-mountable device isthus provided.

In one embodiment, an optically transparent cover layer is arranged onthe front side of the first carrier, wherein the control lines arearranged between the cover layer and the first carrier. Thelight-emitting diode chips and the control lines are thus protectedvis-á-vis environmental influences.

In a further embodiment, control circuits configured for driving thelight-emitting diode chips are provided between the first carrier andthe cover layer. A compact construction of the multi-chip modlecomprising control circuits for the light-emitting diodes is provided inthis way. Depending on the embodiment chosen, a control circuit may beprovided for each light-emitting diode chip. As a result, eachlight-emitting diode chip may be driven individually. The arrangement ofthe control circuits between the carrier and the cover layer enables asimple method for producing the control circuits, wherein the controlcircuits are additionally protected vis-á-vis environmental influences.

Depending on the embodiment chosen, a control circuit may comprise atleast one transistor, in particular two transistors and a capacitor. Thecontrol circuit may be formed, e.g., using TFT technology.

Improved radiation of the multi-chip module is achieved by virtue of thefact that, in one embodiment, the control circuit and/or the controllines and/or the drive lines consist(s) of an optically transparentmaterial. The optically transparent material may be, for example,transparent conductive oxide (TCO) such as, for example, indium tinoxide, indium zinc oxide, a carbon nanotube film or a transparentelectrically conductive polymer.

In a further embodiment of the multi-chip module, the first carrier isarranged on the top side of a second carrier, wherein the second carriercomprises a second conductive connection led from a top side to anunderside of the second carrier, wherein the second connection isconnected to the collective line. In this way, the electrical contactingof the second electrical contacts is led onto an underside of the secondcarrier. As a result, a stabler construction of the multi-chip modulemay be achieved, wherein the electrical contacting of the secondelectrical contacts of the light-emitting diode chips on the undersideof the second carrier is nevertheless possible.

In a further embodiment, the first electrical contacts of thelight-emitting diode chips are also led via conductive connectionsthrough the second carrier onto an underside of the second carrier.Consequently, in the case of an arrangement comprising a second carrier,too, the first electrical contacts of the light-emitting diode chips maybe electrically contacted via the underside of the second carrier.Consequently, a surface-mountable multi-chip module is also provided inthe case of the arrangement comprising two carriers.

In a further embodiment, electrical lines are provided on the front sideof the first carrier, wherein the electrical lines are connected to thefirst electrical terminals of the light-emitting diode chips, andwherein the electrical lines are led laterally to terminal contacts atthe edge region of the first carrier. In this way, the first electricalcontacts of the light-emitting diode chips may be electrically contactedvia a front side of the first carrier.

In a further embodiment, the first carrier comprises a fourthelectrically conductive connection led from a top side to an undersideof the first carrier, wherein the fourth conductive connection isconnected to the collective line. The fourth conductive connection isadditionally connected to a fifth electrical line, wherein the fifthline is led on the front side of the first carrier laterally outward toterminal contacts. Consequently, the second electrical contacts of thelight-emitting diode chips may be electrically contacted via a frontside of the first carrier.

Depending on the embodiment chosen, the second carrier may be configuredas a leadframe or as a circuit board. In the configuration as aleadframe, the leadframe may also be formed from an electricallyconductive material and simultaneously constitute the electricalconnection between a front side and a rear side of the leadframe. In theconfiguration of the circuit board, the electrical connection betweenthe front side and the rear side of the circuit board is formed with theaid of a plated-through hole comprising an electrically conductivematerial.

In a further embodiment, the second carrier is arranged on a thirdcarrier. The third carrier comprises a fifth electrical line connectedto the second conductive connection. Moreover, the third carrier iscovered with a mold layer that at least partly covers side faces of thefirst carrier. In this way, a compact construction of the multi-chipmodule is achieved which is suitable in particular for arranging aplurality of second carriers with light-emitting diode chips on thethird carrier.

In a further embodiment, the first carrier is formed integrally and inmaterially unary fashion with the mold layer.

In accordance with a further aspect of the invention, a method forproducing a multi-chip module is provided, wherein at least twolight-emitting diode chips are embedded at least by side faces in afirst carrier comprising a mold material. The light-emitting diode chipscomprise first electrical contacts on a front side. The front side isconfigured as a radiation side. The light-emitting diode chips comprisesecond electrical contacts on a rear side. The second electricalcontacts are connected to a collective line. The collective line is ledto a rear side of the first carrier. The first contacts are connected tocontrol lines, wherein the control lines are arranged on the front sideof the first carrier. A simple method for producing a multi-chip moduleis provided in this way.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is explained in greater detail below with reference to thefigures, in which

FIGS. 1 to 12 show method steps of a first method for producing amulti-chip module,

FIGS. 13 to 23 show method steps of a second method for producing amulti-chip module comprising a cover layer,

FIGS. 24 and 25 show method steps for producing a multi-chip module inthe panel,

FIG. 26 shows a cross section through a further embodiment of amulti-chip module comprising a third carrier,

FIG. 27 shows a further embodiment of a multi-chip module,

FIG. 28 shows a further embodiment of a multi-chip module, and

FIG. 29 shows an equivalent circuit diagram for the control circuit.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIG. 1 shows a light-emitting diode chip 1 in a schematic cross sectionin a Y-X-plane, wherein the light-emitting diode chip 1 comprises aradiation side 2 arranged opposite in relation to a rear side 3. TheY-axis and the X-axis are perpendicular to one another. Thelight-emitting diode chip 1 comprises a first electrical contact 4 onthe radiation side 2. Moreover, the light-emitting diode chip 1comprises a second electrical contact 5 on the rear side 3. Thelight-emitting diode chip 1 is configured, for example, as asemiconductor chip comprising a pn structure and an active zone. In thiscase, it is possible to electrically contact the first electricalcontact 4 with the p-side and the second electrical contact 5 with then-side of the semiconductor structure. The light-emitting diode chip 1may be produced, for example, from a III-V compound semiconductor orfrom a II-VI compound semiconductor. By way of example, thelight-emitting diode chip may be constituted from indium galliumarsenide, gallium arsenide phosphide, aluminum indium gallium phosphide,gallium phosphide, silicon carbide, zinc selenide, indium galliumnitrite or gallium nitrite.

Depending on the embodiment chosen, the light-emitting diode chip 1 maybe embedded in a main body 6, as is illustrated in FIG. 1. Depending onthe embodiment chosen, the main body 6 may also be dispensed with. Inthe configuration of the main body 6, the second electrical contact 5 isarranged on a rear side 3 of the main body 6 and is electricallyconductively connected to the light-emitting diode chip 1 via anelectrically conductive connection 7. By means of a correspondingenergization of the electrical contacts 4, 5, the light-emitting diodechip 1 is caused to emit light, wherein electromagnetic radiation isemitted at least via the radiation side 2. Light-emitting diode chips 1comprising a main body 6 are used hereinafter. However, light-emittingdiode chips 1 without a main body may be used in the same way.

FIG. 2 shows, in a cross section in the Y-X-plane, an arrangement ofthree light-emitting diode chips 1 embedded in a first carrier 8. Thefirst carrier 8 is constituted from a mold material. The mold materialmay comprise silicone and/or epoxy material, for example. In theembodiment illustrated, the light-emitting diode chips 1 are coveredwith the mold material on all side faces and on the rear side 3. Theradiation side 2 of the light-emitting diode chips 1 is free of the moldmaterial. Depending on the embodiment chosen, the light-emitting diodechips 1 may also be enclosed by molding in such a way that the rear side3 of the light-emitting diode chips 1 is free of the mold material.Three light-emitting diode chips 1 embedded in the first carrier 8 areillustrated merely by way of example in FIG. 2. Depending on theembodiment chosen, more or else fewer light-emitting diode chips 1 maybe embedded in the first carrier 8.

FIG. 3 shows a cross section through a light-emitting diode chip 1perpendicular to the illustration in FIG. 2. FIG. 3 illustrates thecross section in the y-z-plane, wherein the y-axis is arrangedperpendicular to the z-axis. The z-axis is thus also arrangedperpendicular to the x-axis.

FIG. 4 shows a further method step with a cross section in they-x-plane, wherein recesses 10 for each light-emitting diode chip 1 areintroduced into a rear side 9 of the first carrier 8. The recesses 10extend from the rear side 9 of the first carrier 8 as far as the rearside 3 of the light-emitting diode chip 1. The recesses 10 are separatedfrom one another. In the embodiment illustrated, the cross section ofthe recesses 10 in the Y-X-plane is configured in a manner taperingslightly conically in the direction of the light-emitting diode chip 1.

FIG. 5 shows a cross section through a light-emitting diode chip 1 ofthe arrangement from FIG. 4 in the y-z-plane. In this case, it isevident that next to the light-emitting diode chip 1 a second recess 11is introduced into the first carrier 8. The second recess ii extendsfrom the rear side 9 of the first carrier 8 as far as a front side 12 ofthe first carrier 8. The second recess 11 likewise comprises a crosssection configured in a manner tapering conically in the direction ofthe front side 12. The recess 10 and the second recess 11 may beintroduced into the first carrier 8, for example, with the aid of alaser or with the aid of drilling or etching methods. The second recess11 is at a distance from the light-emitting diode chip 1 laterally inthe z-direction. In the embodiment illustrated, for each light-emittingdiode chip 1 a corresponding second recess 11 is formed in the firstcarrier 8.

FIG. 6 shows a further method step, in which the recesses 10 are filledwith an electrically conductive material 13. The electrically conductivematerial 13 is in contact with the second electrical contacts 5 of thelight-emitting diode chips 1. Moreover, the electrically conductivematerial 13 is arranged on the rear side 9 of the first carrier 8 atleast in a region between the recesses 10. The electrically conductivematerial 13 of the recesses 10 forms a collective line 14. In theembodiment illustrated, the second electrical contacts 5 of threelight-emitting diode chips 1 are electrically connected to one anothervia a collective line 14. Depending on the embodiment chosen, it is alsopossible for only two second electrical contacts 5 of two light-emittingdiode chips 1 to be connected to a collective line 14. In addition, itis also possible for more than three second electrical contacts 5 ofthree light-emitting diode chips 1 to be connected to a collective line14. By way of example, a separate collective line 14 may be provided foreach light-emitting diode chip 1. The electrically conductive material13 may be introduced into the recesses 10 and applied on the rear side 9of the first carrier 8, for example, by lithography methods andelectroplating. By way of example, a metal, in particular a high-grademetal, and/or layers of different metals may be used as material for theelectrically conductive material 13.

In addition, in this method step, as is illustrated in FIG. 7 , thesecond recesses 11 are also filled with the electrically conductivematerial 13. FIG. 7 shows a cross section of the arrangement from FIG. 6in the y-z-plane. In addition, in this method step, an electricallyconductive material 13 is applied on the front side 12 of the firstcarrier 8 for each second recess 11 and is connected to the firstelectrical contact 4 of the light-emitting diode chip. On the front side12, the electrically conductive material 13 forms a control line 15 thatis led via an electrical plated-through hole 17 through the secondrecess 11 on the rear side 9 of the first carrier 8.

In a further method step, groups of light-emitting diode chips 1 thatare connected to the collective line 14 are released from the firstcarrier 8 and singulated. FIG. 8 shows a group 16 of threelight-emitting diode chips 1 that are singulated and constitute amulti-chip module. FIG. 9 shows a cross section through a light-emittingdiode chip 1 of the group 16 from FIG. 8 in the y-z-plane. Theplated-through hole 17 via which the first electrical contact 4 of thelight-emitting diode chip 1 is led in an electrically conductive fashionto the rear side 9 of the first carrier 8 is clearly discernible here.

FIG. 10 shows an enlarged cross section through the arrangement fromFIG. 8 in the y-x-plane.

FIG. 11 shows a plan view of the rear side 9 of the first carrier 8 ofthe arrangement from FIG. 10. The collective line 14 comprises arectangular surface extending along the x-direction over the threeplated-through holes 17. Each plated-through hole 17 constitutes arectangular contact pad on the rear side 9 of the first carrier 8. Thefirst electrical contacts 4 of the three light-emitting diode chips 1may thus be electrically contacted individually. At the same time, viathe collective line 14, the second electrical contacts 5 of the threelight-emitting diode chips 1 may be jointly electrically contacted withground, for example. Depending on the embodiment chosen, a multi-chipmodule may also comprise more or fewer than three light-emitting diodechips 1 arranged in accordance with the arrangement in FIG. 8.

FIG. 12 shows a plan view of the front side 12 of the first carrier 8 ofthe group 16 from FIG. 10. In the embodiment illustrated, thelight-emitting diode chip 1 is embedded in the main body 6. The mainbody 6 may be constituted from an electrically insulating material.Depending on the embodiment chosen, the main body 6 may also bedispensed with.

FIGS. 1 to 12 show a first method for producing a multi-chip module.

FIGS. 13 to 23 show method steps of a second method for producing amulti-chip module. FIG. 13 shows a cross section in the y-x-planethrough a second carrier 20, on which three light-emitting diode chips 1are arranged. The second carrier 20 comprises on a front side 21 acollective line 14 that is in electrical contact with the secondelectrical contacts 5 of the light-emitting diode chips 1. Thelight-emitting diode chips 1 are arranged with the rear side 3 on thecollective line 14. The collective line 14 is connected via a secondplated-through hole 22 to a rear-side metallization 23 formed on a rearside 24 of the second carrier 20. The second carrier 20 may beconfigured, for example, in the form of a circuit board or in the formof a leadframe. The second plated-through hole 22 may be introduced intothe second carrier 20 with the aid of laser, drilling or etching methodsand with the aid of galvanic methods, analogously to the plated-throughhole of the first carrier.

FIG. 14 shows the cross section through the middle light-emitting diodechip 1 in the y-z-plane in FIG. 13. The collective line 14, the secondplated-through hole 22 and the rear-side metallization 23 areconstituted from an electrically conductive material 13. Moreover, thesecond plated-through hole 22 is led through a continuous recess of thesecond carrier 20 extending from the front side 21 of the second carrier20 as far as the rear side 24 of the second carrier 20. Thelight-emitting diode chips 1 may be secured on the collective line 14with the aid of adhesive bonding methods or with the aid of solderingmethods.

FIG. 15 shows a further method step, in which the light-emitting diodechips 1 are embedded at least partly by the side faces in a moldmaterial and a first carrier 8 is formed on the front side 21 of thesecond carrier 20. FIG. 15 shows the cross section in the y-x-plane.FIG. 16 shows a cross section through the middle light-emitting diodechip 1 in the y-z-plane of the arrangement in FIG. 15.

FIG. 17 shows a further method step, wherein a cover layer 25 isprovided, for example, in the form of a plate, in particular in the formof a glass plate or sapphire plate. The cover layer 25 comprises controlcircuits 27 on an underside 26. In this case, a control circuit 27 maybe provided for each light-emitting diode chip 1. The control circuit 27is configured to supply at least one light-emitting diode chip 1 withcurrent depending on driving of the control circuit 27. In addition, acontrol circuit 27 may be provided for a plurality of light-emittingdiode chips 1. The control circuit 27 may comprise, for example, atleast one transistor, in particular two transistors and a capacitor. Thecontrol circuit 27 may be formed using TFT technology. Moreover, thecontrol circuit 27 may be produced from an optically transparentmaterial. The control circuit 27 is illustrated schematically merely asa block. The control circuit 27 may comprise a plurality of layers andcomprise, for example, transparent or semitransparent materials such as,for example, amorphous silicon, transparent electrically conductiveoxides (TCO), such as, for example, indium tin oxide and indium zincoxide, or carbon nanotube films or transparent conductive polymers andinsulating layers.

FIG. 18 shows a cross section of the arrangement from FIG. 17 in they-z-plane. In the example chosen, each control circuit 27 is connectedto a drive line 28 that is likewise arranged on the underside 26 of thecover layer 25. The drive line 28 is led in the z-direction for apredefined distance away from the control circuit 27.

FIG. 19 shows a method step in which the cover layer 25 is secured onthe front side 12 of the second carrier 8. For this purpose, electricalterminals of the control circuit 27 are connected to the firstelectrical contacts 4 of the light-emitting diode chips 1 directly orvia a control line. By way of example, the cover layer 25 may beadhesively bonded onto the first carrier 8. Moreover, for forming theelectrically conductive connection between the first electrical contacts4 and the control circuits 27, by way of example, nanowires comprisingsilver may be used as control lines. Consequently, the cover layer 25 isfixedly connected to the arrangement of the light-emitting diode chips 1and at the same time an electrically conductive connection is producedbetween an output terminal of the control circuit 27 and the respectivefirst electrical contact 4 of the light-emitting diode chip 1.

FIG. 20 shows a cross section of the arrangement from FIG. 19 in they-z-plane. Plated-through holes 17 are introduced into the first andsecond carriers 8, 20 for each light-emitting diode chip 1 laterallynext to the light-emitting diode chip 1. The plated-through hole 17 isled from a rear side 24 of the second carrier 20 as far as the frontside 12 of the first carrier 8. Moreover, the plated-through hole 17 isconnected to the drive line 28. The plated-through hole 17 is led as faras the rear side 24 of the second carrier 20. The drive line 28 isconnected to an input terminal of the control circuit 27.

FIG. 21 shows a view of the rear side 24 of the second carrier 20.

FIG. 22 shows a plan view of the arrangement from FIG. 20 in a schematicillustration, wherein the cover layer is not illustrated and the controlcircuits 27 and the drive line 28 are illustrated schematically.

FIG. 23 shows a further embodiment of a multi-chip module configuredsubstantially in accordance with the embodiment in FIG. 10, but whereina cover layer 25 with control circuits 27 for each light-emitting diodechip 1 is additionally formed instead of the control line 15. Thecontacting from the drive line 28 through to the rear side 9 of thefirst carrier 8 is carried out by the plated-through hole 17 as in theembodiment in FIG. 10.

FIG. 24 shows an arrangement in accordance with FIG. 19, but wherein aplurality of groups 16 of light-emitting diode chips 1 are arranged inthe first and second carriers 8, 20 and are covered with an integralcover layer 25 with control circuits 27. FIG. 24 shows a partial excerptfrom an arrangement. Thus a multiplicity of groups 16 of light-emittingdiode chips 1 may be arranged on an integral first and second carrier 8,20 and be provided with an integral cover layer 25. The groups 16 oflight-emitting diode chips 1 may comprise the same number or differentnumbers of light-emitting diode chips 1. A multi-module is produced bythe individual groups of light-emitting diode chips 1 being singulated,as is illustrated schematically in FIG. 25.

The multi-module produced in accordance with the method in FIGS. 1 to 12may also likewise be produced in the form of a plurality of groups whichare arranged in the first carrier 8 and are singulated by means ofcorresponding method steps.

FIG. 26 shows a schematic cross section through a further embodiment,which substantially corresponds to the embodiment in FIG. 25, wherein atleast one group 16 of three light-emitting diode chips 1, that is to saya multi-chip module 30, 31, is arranged on a third carrier 29. In theembodiment illustrated, two multi-chip modules 30, 31 are arranged onthe third carrier 29. Moreover, the two multi-chip modules 30, 31 areembedded in a mold layer 32 arranged on the third carrier 29. The moldlayer 32 is constituted from a mold material such as silicone or epoxymaterial, for example. By way of example, the mold layer 32 may beconstituted from the same material as the first carrier 8. The thirdcarrier 29 may be configured, for example, as a circuit board andcomprise a multilayer wiring. Depending on the embodiment chosen, inthis embodiment, the formation of the first carrier 8 may be dispensedwith and the first carrier 8 may be configured in the form of the moldlayer 32. The electrical contacting of the first contacts is carried outas in FIGS. 19 and 20.

FIG. 27 shows, in a schematic illustration, a multi-chip module 30comprising three light-emitting diode chips 1 arranged with theradiation side on a cover layer 25. The cover layer 25 comprises controlcircuits 27. The control circuits 27 are connected to the first contacts4 of the light-emitting diode chips 1. Moreover, the rear sides 3 of thelight-emitting diode chips 1 are connected to a collective line 14applied on a second carrier 20. Furthermore, the cover layer 25comprises a contact pad 33. Furthermore, a first carrier 8 comprisingmold material is formed on the cover layer 25, the light-emitting diodechips 1 and at least partly the second carrier 20 being embedded in saidfirst carrier. Moreover, a third recess 34 is led from a rear side 24 ofthe second carrier 20 as far as the front side 21 of the second carrier20 and through the first carrier 8 as far as the contact pad 33. In thiscase, the third recess 34 at least partly adjoins the collective line 14or passes through the collective line 14. The third recess 34 is filledwith an electrically conductive material 13. The collective line 14 isthus electrically conductively connected to the contact pad 33. Thecontact pad 33 and the drive lines (not illustrated) of the controlcircuits 27 are electrically conductively connected via electrical lines51 to terminal contacts 35, 36 arranged on the first carrier and/or onthe cover layer 25. The terminal contacts 35, 36 may be arrangedlaterally next to the first carrier 8. Only one terminal contact 35, 36and only one electrical line 51 are illustrated schematically in thefigure illustrated. With the aid of this arrangement, an entire wiringof the multi-chip module 30 may be embodied on the cover layer 25. Thecontrol circuits 27 and the wirings on the cover layer 25 may beconstituted from an optically transparent material. Likewise, the coverlayer 25 may be constituted from an optically transparent material suchas glass or sapphire, for example.

FIG. 28 shows a further embodiment, in which two multi-chip modules 30,31 are arranged on a cover layer 25. The multi-chip modules areconfigured substantially in accordance with the embodiment in FIG. 19.Moreover, the multi-chip modules 30, 31 are embedded in a mold layer 32,which also covers the rear-side metallizations 23 of the second carriers20. Moreover, a third and a fourth plated-through hole 37, 38 areintroduced into the mold layer 32. The third plated-through hole 37extends from a rear side 40 of the mold layer 32 as far as the rear-sidemetallization 23 of the second carriers 20 of the multi-chip modules 30,31. The fourth plated-through holes 38 extend from the rear side 40 ofthe mold layer 32 as far as the drive line 28 of the control circuits27. FIG. 28 illustrates only one fourth plated-through hole 38 for amulti-chip module 30, 31. However, a fourth plated-through hole 38 isprovided for each control circuit 27 of each light-emitting diode chip1. The arrangement illustrated in FIG. 28 may subsequently be mounted ona circuit board. Moreover, the arrangement in FIG. 28 may be soldereddirectly onto an SMT connector.

FIG. 29 shows an electrical equivalent circuit diagram for the controlcircuit 27 for a light-emitting diode chip 1 in a schematicillustration. A first electrical terminal 41 of the light-emitting diodechip 1 is connected to a second transistor 42. A second electricalterminal 43 of the light-emitting diode chip 1 is connected to a groundline 44. An input of the second transistor 42 is connected to a supplyline 45. The supply line 45 provides a positive voltage. Furthermore, acapacitor 46 is connected between the input of the second transistor 42and a gate terminal 47 of the second transistor 42. Furthermore, thegate terminal 47 of the second transistor is connected to a column line49 via a first transistor 48. Moreover, a gate terminal 56 of the firsttransistor 48 is connected to a row line 50. Each of the light-emittingdiode chips 1 is supplied with current by a drive circuit 27 dependingon the driving of the column line 49 and the row line 50.

The control circuits 27 may additionally comprise electronically activediodes or transistor structures and capacitances. The control circuitsand the electrical lines on the transparent cover layer may beconstituted from transparent materials. Moreover, the electrical linesmay also be constituted from thin metallic conductor tracks that bringabout hardly any shading. The electrically conductive material 13 forthe plated-through holes may be constituted, for example, from atransparent material, in particular from a transparent conductiveadhesive. Moreover, electrically conductive nanowires comprising silver,for example, may be used.

The mold material of the first carrier 8 or the mold material of themold layer 32 may be constituted from a black or reflective material. Inthe case of a white mold material, a thin black layer may be applied onthe non-light-emitting surfaces for the purpose of enhancing contrast.The cover layer 25 may be configured as mixing element, that is to sayas mixing optics. Moreover, the cover layer 25 may be configured as adiffusely scattering element at least at an area, in particular at theentire surface. Furthermore, the cover layer 25 may comprise furtheroptical elements, such as lenses, for example.

Depending on the embodiment chosen, the wiring may also be formed on thetop side of the first carrier 8. The multi-chip modules illustrated maybe mounted directly onto corresponding devices or SMT connectors.

The proposed multi-chip modules afford the advantage that the complexityof the construction is reduced, wherein a simpler mounting technique atchip level and at submount level may be used. Moreover, an increasedflexibility in the mounting of the multi-chip modules is provided.Furthermore, the proposed multi-chip modules comprise an increasedrobustness. Highly parallel die attach processes may be used formounting the light-emitting diode chips on the second carrier. Fastserial die attach processes may also be used for mounting the multi-chipmodules on a third carrier. The light-emitting diode chips may comprisean edge length of between 1 μm and 100 μm and be formed in a squarefashion, for example. The multi-chip modules may comprise, for example,an edge length of from a few micrometers to a plurality of millimeters.

By means of the selection of multi-chip modules, a high yield maylikewise be achieved at the module level. Furthermore, it is possible toachieve an ever finer pixelation by the clustering of emissive surfacesat the multi-chip module level. Moreover, known techniques from TFTtechnology may be used to realize the control circuits 27 for formingthe individual driveability of the individual light-emitting diode chips1. Furthermore, the proposed vertical light-emitting diode chips 1comprise a simple construction.

The invention has been illustrated and described in greater detail onthe basis of the preferred exemplary embodiments. Nevertheless, theinvention is not restricted to the examples disclosed. Rather, othervariations may be derived therefrom by the person skilled in the art,without departing from the scope of protection of the invention.

1-15. (canceled)
 16. A multi-chip module comprising: a first carriercomprising a mold material; and at least two light-emitting diode chipsembedded at least by side faces in the first carrier, wherein thelight-emitting diode chips comprise first electrical contacts on a frontside and second electrical contacts on a rear side, wherein the frontside is configured as a radiation side, wherein the first electricalcontacts are connected to control lines, wherein the control lines arearranged on a front side of the first carrier, wherein the secondelectrical contacts are connected to a collective line, and wherein thecollective line is led to a rear side of the first carrier.
 17. Themulti-chip module according to claim 16, wherein the first carriercomprises electrically conductive plated-through holes which are ledfrom the front side to the rear side of the first carrier, and wherein acontrol line is connected to a plated-through hole.
 18. The multi-chipmodule according to claim 17, further comprising a second carrier havingthird electrically conductive connections led from a front side to arear side of the second carrier, wherein the third conductiveconnections are in each case connected to a plated-through hole of thefirst carrier.
 19. The multi-chip module according to claim 16, whereinthe first carrier comprises a fourth electrically conductive connectionled from the front side to the rear side of the first carrier, whereinthe fourth conductive connection is connected to the collective line,wherein the fourth conductive connection is connected to an electricalline, and wherein the electrical line is led on the front side of thefirst carrier laterally outward to terminal contacts.
 20. The multi-chipmodule according to claim 16, further comprising an opticallytransparent cover layer arranged on the front side of the first carrier,wherein the control lines are arranged between the cover layer and thefirst carrier.
 21. The multi-chip module according to claim 20, whereinthe control lines are connected to control circuits, wherein the controlcircuits are arranged between the first carrier and the cover layer,wherein the control circuits are connected to drive lines, and whereinthe drive lines are connected to plated-through holes.
 22. Themulti-chip module according to claim 21, wherein a control circuitcomprises at least one transistor.
 23. The multi-chip module accordingto claim 21, wherein a control circuit is assigned to eachlight-emitting diode chip, and wherein the control circuit is configuredto supply or not to supply the light-emitting diode chip with currentdepending on driving.
 24. The multi-chip module according to claim 21,wherein a control circuit consists essentially of an opticallytransparent material.
 25. The multi-chip module according to claim 21,wherein the first carrier comprises electrical lines on the front sidewhich are connected to the first electrical contacts, and wherein theelectrical lines are led laterally to terminal contacts at an edgeregion of the first carrier.
 26. The multi-chip module according toclaim 25, wherein the first carrier is arranged on a front side of asecond carrier, wherein the second carrier comprises a second conductiveconnection led from the front side to a rear side of the second carrier,wherein the second connection is connected to the collective line. 27.The multi-chip module according to claim 26, wherein the second carrieris a leadframe or a circuit board.
 28. The multi-chip module accordingto claim 26, wherein the second carrier is arranged on a third carrier,wherein the third carrier comprises an electrical line connected to thesecond conductive connection of the second carrier, and wherein thethird carrier is covered with a mold layer that at least laterallypartly covers the first carrier.
 29. The multi-chip module according toclaim 28, wherein the mold layer is formed integrally and in materiallyunary fashion with the first carrier.
 30. The multi-chip moduleaccording to claim 16, wherein the first carrier comprises electricallines on the front side which are connected to the first electricalcontacts, and wherein the electrical lines are led laterally to terminalcontacts at an edge region of the first carrier.
 31. The multi-chipmodule according to claim 16, wherein the first carrier is arranged on afront side of a second carrier, wherein the second carrier comprises asecond conductive connection led from the front side to a rear side ofthe second carrier, wherein the second connection is connected to thecollective line.
 32. The multi-chip module according to claim 3 1,wherein the second carrier comprises third electrically conductiveconnections led from a front side to a rear side of the second carrier,wherein the third conductive connections are in each case connected to aplated-through hole of the first carrier.
 33. The multi-chip moduleaccording to claim 3 1, wherein the first carrier comprises a fourthelectrically conductive connection led from a front side to a rear sideof the first carrier, wherein the fourth conductive connection isconnected to the collective line, wherein the fourth conductiveconnection is connected to an electrical line, wherein the electricalline is led on the front side of the first carrier laterally outward toterminal contacts.
 34. A method for producing the multi-chip moduleaccording to claim 16, embedding the at least two light-emitting diodechips at least by the side faces in the first carrier, wherein thelight-emitting diode chips comprise the first electrical contacts on thefront side, wherein the front side is configured as a radiation side,and wherein the light-emitting diode chips comprise the secondelectrical contacts on the rear side; connecting the second electricalcontacts to the collective line, wherein the collective line is led tothe rear side of the first carrier; and connecting the first electricalcontacts to the control lines, wherein the control lines are arranged onthe front side of the first carrier.
 35. A multi-chip module comprising:a first carrier comprising a mold material; and at least twolight-emitting diode chips embedded at least by side faces in the firstcarrier, wherein the light-emitting diode chips comprise firstelectrical contacts on a front side and second electrical contacts on arear side, wherein the front side is configured as a radiation side,wherein the first electrical contacts are connected to control lines,wherein the control lines are arranged on a front side of the firstcarrier, wherein the second electrical contacts are connected to acollective line, wherein the collective line is led to a rear side ofthe first carrier, wherein an optically transparent cover layer isarranged on the front side of the first carrier, wherein the controllines are arranged between the cover layer and the first carrier,wherein the control lines are connected to control circuits, wherein thecontrol circuits are arranged between the first carrier and the coverlayer, wherein the control circuits are connected to drive lines,wherein the drive lines are connected to plated-through holes, whereinthe first carrier comprises electrical lines on the front side which areconnected to the first electrical contacts, and wherein the electricallines are led laterally to terminal contacts at an edge region of thefirst carrier.